smartswitch ? AAT7204 25v n-ch 2.5v rated battery switch preliminary information 7204.2003.05.0.61 1 general description analogic tech??s AAT7204 is a dual 2.5v rated n channel mosfet designed for use in battery packs, cellular phones and battery powered portable equipment. utilizing analogic tech?s pro- prietary ultra high density trenchdmos? process, the AAT7204 achieves performance normally found in products that are rated to block only 20v in one that blocks 25v. featuring a small footprint and low profile of <1.2mm, the tssop8 package is ideal for use in battery and load management applications where height and size are critical. applications ? li ion battery packs ? cellular and cordless telephones ? battery-powered portable equipment features ?v ds(max) = 25v ?i d(max) = 6.0a 1 @ 25c ? low r ds(on) : ? 26 m ? @v gs = 4.5v ? 40 m ? @v gs = 2.5v ? optimized for battery protection tssop8 package s g d d d d g s 1 1 2 2 1 2 3 4 8 7 6 5 absolute maximum ratings (t a =25c unless otherwise noted) thermal characteristics symbol description value units r ja typical junction-to-ambient 2 88 c/w r ja2 maximum junction-to-ambient, one mosfet on, t <10s 1 80 c/w r jf typical junction-to-foot 1 40 c/w symbol description 10 sec dc units v ds drain-source voltage 25 v v gs gate-source voltage 12 i d continuous drain current @ t j =150c 1 t a = 25c 6.0 5.1 t a = 70c 4.8 4.1 i dm pulsed drain current (10s pulse width) 30 a i s continuous source current (source-drain diode) 1 1.7 1.3 i sm pulsed source current (source-drain diode) 3 30 p d maximum power dissipation 1 t a = 25c 1.5 1.1 w t a = 70c 1.0 0.7 t j , t stg operating junction and storage temperature range -55 to 150 c batteryswitch ?
AAT7204 25v n-ch 2.5v rated battery switch 2 7204.2003.05.0.61 electrical characteristics (t j =25c unless otherwise noted) note 1: based on thermal dissipation from junction to ambient while mounted on a 1? x 1? pcb with optimized layout. a 10 secon d pulse on a 1? x 1? pcb approximates testing a device mounted on a large multi-layer pcb as in many applications. r jf + r fa = r ja where the foot thermal reference is defined as the normal solder mounting surface of the device?s leads. r jf is guaranteed by design; however, r fa is determined by pcb design. actual maximum continuous current is limited by the application?s design. note 2: steady state thermal response while mounted on a 1? x 1? pcb with maximum copper area is provided for comparison with other devices. this test condition approximates many battery pack applications. note 3: pulsed measurement 300 s, single pulse. note 4: guaranteed by design. not subject to production testing. symbol description conditions min typ max units dc characteristics bv dss drain-source breakdown voltage v gs =0v, i d =250a 25 v r ds(on) drain-source on-resistance 3 v gs =4.5v, i d =6.0a 21 26 m ? v gs =2.5v, i d =4.8a 32 40 i d(on) on-state drain current v gs =4.5v, v ds =5v (10s pulse width) 30 a v gs(th) gate threshold voltage v gs =v ds , i d =250a 0.6 v i gss gate-body leakage current v gs =12v, v ds =0v 100 na i dss drain source leakage current v gs =0v,v ds =25v 1 a v gs =0v,v ds =20v, t j =70c 4 5 g fs forward transconductance 3 v ds =5v, i d =6.0a 19 s dynamic characteristics 4 q g total gate charge v ds =15v, r d =3.0 ? , v gs =4.5v 16 23 q gs gate-source charge v ds =15v, r d =3.0 ? , v gs =4.5v 2.7 nc q gd gate-drain charge v ds =15v, r d =3.0 ? , v gs =4.5v 3.2 t d(on) turn-on delay v dd =15v, v gs =4.5v, r d =3.0 ? , r g =6 ? 10 t r turn-on rise time v dd =15v, v gs =4.5v, r d =3.0 ? , r g =6 ? 14 ns t d(off) turn-off delay v dd =15v, v gs =4.5v, r d =3.0 ? , r g =6 ? 31 t f turn-off fall time v dd =15v, v gs =4.5v, r d =3.0 ? , r g =6 ? 17 source-drain diode characteristics v sd source-drain forward voltage 3 v gs =0, i s =6.0a 1.2 v i s continuous diode current 1 1.7 a
typical characteristics (t j = 25oc unless otherwise noted) threshold voltage -0.6 -0.4 -0.2 0 0.2 0.4 -50 0 50 100 150 t j ( c) v gs(th) variance (v) i d = 250 a on-resistance vs junction temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j ( c) normalized r ds(on) v gs = 4.5v i d = 5.5a on-resistance vs. gate to source voltage 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0 123 4 5 6 v gs (v) r ds(on) ( ? ? ) i d = 5.5a on-resistance vs. drain current i d (a) r ds(on) ( ? ? ) 0 0.05 0.1 0.15 0.2 036912 v gs = 2.5v v gs = 4.5v transfer characteristics 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3 v gs (v) i d (a) -55 c 25 c 125 c output characteristics 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3 v ds (v) i ds (a) 2.5v v gs = 3v through 5v 2v 1.5v AAT7204 25v n-ch 2.5v rated battery switch 7204.2003.05.0.61 3
typical characteristics (t j = 25oc unless otherwise noted) capacitance v ds (v) capacitance (pf) 0 500 1000 1500 2000 0 5 10 15 20 25 c iss c oss c rss source-drain diode forward voltage 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 v sd (v) i s (a) t j = 25 c t j = 150 c gate charge 0 1 2 3 4 5 04 8121620 q g , charge (nc) v gs (v) v d = 15v i d = 5.0a AAT7204 25v n-ch 2.5v rated battery switch 4 7204.2003.05.0.61
AAT7204 25v n-ch 2.5v rated battery switch 7204.2003.05.0.61 5 ordering information note: sample stock is generally held on all part numbers listed in bold . package information tssop-8 all dimensions in millimeters. detail a 4.40 0.10 6.40 0.20 0.65 bsc 3.00 0.10 0.245 0.055 8 0.10 0.05 0.60 0.15 0.145 0.055 1.05 max 1.20 max 4 4 12 12 ref 4 1.00 ref package marking part number (tape and reel) tssop-8 7204 AAT7204ihs-t1
AAT7204 25v n-ch 2.5v rated battery switch 6 7204.2003.05.0.61 advanced analogic technologies, inc. 830 e. arques avenue, sunnyvale, ca 94085 phone (408) 737-4600 fax (408) 737-4611 analogictech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an analogictech pr oduct. no circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. analogictech reserves the right to make changes to their products or specifications or to discontinue any product or service wi thout notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. all products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of l iability. analogictech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accorda nce with analogictech?s standard warranty. testing and other quality control techniques are utilized to the extent analogictech deems necessary to support this warranty. specific tes ting of all parameters of each device is not necessarily performed.
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